2SD1784 2002-07-31 1 toshiba field effect transistor silicon npn epitaxial type (pct process) (darlington) 2SD1784 micro motor drive, hammer drive applications switching applications power amplifier applications high dc current gain: h fe = 4000 (min) (v ce = 2 v, i c = 150 ma) low saturation voltage: v ce (sat) = 1.5 v (max) (i c = 1 a, i b = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 10 v collector current i c 1.5 a base current i b 50 ma collector power dissipation p c (note) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: 2SD1784 mounted on ceramic substrate (250 mm 2 0.8 t) unit: mm jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SD1784 2002-07-31 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 30 v, i e = 0 D D 10 a emitter cut-off current i ebo v eb = 10 v, i c = 0 D D 10 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 30 D D v dc current gain h fe v ce = 2 v, i c = 150 ma 4000 D D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 1 ma D D 1.5 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 1 ma D D 2.2 v turn-on time t on D 0.20 D storage time t stg D 0.6 D switching time fall time t f D 0.3 D s equivalent circuit marking collector emitter base x n type name v cc = 15 v input i b1 20 s i b (1) = i b (2) = 1 ma duty cycle 1% i b2 15 ? output
2SD1784 2002-07-31 3 i c ? v be i c ? v ce h fe ? i c i c ? v ce i c ? v ce collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector current i c (ma) collector-emitter voltage v ce (v) collector current i c (ma) collector current i c (ma) collector current i c (a) dc current gain h fe base-emitter voltage v be (v) collector current i c (a) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) 0 4 2 0 200 600 400 6 1 3 5 100 300 500 35 common emitter ta 100c 30 25 20 15 10 i b 5 a 0 0 4 2 0 200 600 400 6 1 3 5 100 300 500 60 common emitter ta 25c 50 40 30 20 0 i b 10 a 0 4 2 0 200 600 400 6 1 3 5 100 300 500 160 common emitter ta 50c 140 120 100 80 60 i b 20 a 40 0 0.003 0.1 0.3 0.03 0.01 1 100000 50000 300 10000 5000 3000 1000 common emitter v ce 2 v ta 100c 25 50 30000 500 v ce (sat) ? i c 0.003 1 0.01 1 0.3 0.3 0.5 common emitter i c /i b 1000 0.1 0.03 0.1 5 10 ta 50c 25 100 3 0 1.6 0.8 0 0.2 1.0 0.6 2.4 0.4 1.2 2.0 0.4 0.8 common emitter v ce 2 v ta 100c 25 50
2SD1784 2002-07-31 4 p c ? ta collector-emitter voltage v ce (v) collector current i c (ma) v be (sat) ? i c safe operating area collector current i c (a) base-emitter saturation voltage v be (sat) (v) ambient temperature ta (c) collector power dissipation p c (w) 0.003 5 0.03 0.3 0.01 3 common emitter i c /i b 1000 0.1 0.1 10 30 ta 50c 25 100 1 1 0.5 0.3 3 0 0 0.6 0.2 0.8 0.4 1.2 1.0 120 80 100 40 60 20 140 160 (1) mounted on ceramic substrate (250 mm 2 0.8 t) (2) ta 25c (1) (2) * : single nonrepetitive pulse ta 25c curves must be derated linearly with increase in temperature 0.1 0.01 3 0.3 30 0.03 0.3 0.1 1 0.05 0.5 i c max (pulse) i c max (continuous) 100 ms * 1 ms * 10 ms * 10 1 3 10 5 dc operation mounted on ceramic substrate (250 mm 2 0.8)
2SD1784 2002-07-31 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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